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| PR IM EL Y AR IN CXT953 Central TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT953 type is a high current, high voltage silicon PNP transistor. Packaged in the SOT-89 surface mount case, the CXT953 is ideal for industrial and consumer applications requiring high energy efficiency in a small package. MARKING CODE: FULL PART NUMBER SOT-89 CASE FEATURES: * Low Saturation Voltage: VCE(SAT) = 0.420V Max @ IC = 4.0A MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance NPN complement: CXT853 APPLICATIONS: * Power Management * DC/DC Converters * Motor Driving * Switching SYMBOL VCBO ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO ICBO ICER IEBO BVCBO BVCER BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VCB=100V VCB=100V, TA=100C VCE=100V, RBE 1k VEB=6.0V IC=100A IC=10mA, RBE 1k IC=10mA IE=100A IC=100mA, IB=10mA IC=1.0A, IB=100mA IC=2.0A, IB=200mA IC=4.0A, IB=400mA IC=4.0A, IB=400mA 140 140 100 6.0 P E R I L IN M VCEO VEBO IC PD TJ,Tstg JA Y R A 140 100 6.0 5.0 1.2 -65 to +150 104 TYP MAX 50 1.0 50 10 170 150 120 9.0 20 90 170 320 1.0 50 120 220 420 1.2 UNITS V V V A W C C/W UNITS nA A nA nA V V V V mV mV mV mV V R0 (1-February 2006) Central TM Semiconductor Corp. P L RE IM INA RY CXT953 SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR SYMBOL hFE hFE hFE hFE hFE fT Cob ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCE=1.0V, IC=10mA VCE=1.0V, IC=1.0A VCE=1.0V, IC=3.0A VCE=1.0V, IC=4.0A VCE=1.0V, IC=10A VCE=10V, VCB=10V, IC=100mA, f=50MHz IE=0, f=1.0MHz 100 100 50 30 TYP MAX UNITS 200 70 45 15 150 45 300 MHz pF SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: CXT953 R0 (1-February 2006) |
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